p - channel 30 - v (d - s) mosfet ME4435 01 mar ,200 7 - ver 4 .0 parameter symbol 10 secs steady state unit drain-source voltage v dss -30 v gate-source voltage v gss 20 v t a =25 -9.1 -7 continuous drain current(tj=150 ) t a =70 i d -7.3 -5.6 a pulsed drain current i dm -30 a avalanche energy with single pulse(l=0.1mh) eas 50 mj continuous source current (diode conduction) i s -2.1 -1.25 a t a =25 2.5 1.5 maximum power dissipation t a =70 p d 1.6 0.9 w operating junction temperature t j -55 to 150 tQ10 sec 30 thermal resistance-junction to ambient * r ja steady state 62 /w thermal resistance-junction to case r jc 38 /w general description the ME4435 is the p-channel logic enhancement mode power field effect transistors are produced using high cell den sity , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are par ticularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power los s are needed in a very small outline surface mount package. features -30v/-9.1a,r ds(on) =20m @v gs =-10v -30v/-6.9a,r ds(on) =35m @v gs =-4.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability applications power management in note book portable equipment battery powered system dc/dc converter load switch dsc lcd display inverter pin configuration (sop-8) top view absolute maximum ratings (t a =25 unless otherwise noted) *the device mounted on 1in 2 fr4 board with 2 oz copper www.datasheet.co.kr datasheet pdf - http://www..net/
p - channel 30 - v (d - s) mosfet ME4435 02 mar ,200 7 - ver 4 .0 notes: a. pulse test; pulse width Q 300us, duty cycle Q 2% symbol parameter limit min typ max unit static v gs(th) gate threshold voltage v ds =v gs , i d =-250 a -1 -1.4 -3 v i gss gate leakage current v ds =0v, v gs =20v 100 na v ds =-30v, v gs =0v -1 i dss zero gate voltage drain current v ds =-30v, v gs =0v t j =55 -25 a i d(on) on-state drain current a v d s =-5v, v gs = - 10v -30 a v gs =-10v, i d = -9.1a 15 20 r ds(on) drain-source on-state resistance v gs =-4.5v, i d = -6.9a 25 35 m v sd diode forward voltage i s =-2.1a, v gs =0v -0.8 -1.2 v dynamic qg total gate charge 38 45 qgs gate-source charge 7.7 qgd gate-drain charge v ds =-15v, v gs =-10v, i d =-9.1a 9 nc rg gate resistance v gs =0v, v ds =0v, f=1mh z 5.5 ciss input capacitance 1730 1900 coss output capacitance 240 crss reverse transfer capacitance v ds =-15v, v gs =0v, f=1mhz 70 pf t d(on) turn-on delay time 41 50 t r turn-on rise time 19 23 t d(off) turn-off delay time 105 120 t f turn-on fall time v dd =-15v, r l =15 i d =-1a, v gen =-10v r g =6 17 20 ns electrical characteristics (t a =25 unless otherwise specified) www.datasheet.co.kr datasheet pdf - http://www..net/
p - channel 30 - v (d - s) mosfet ME4435 03 mar ,200 7 - ver 4 .0 typical characteristics (t j =25 noted) www.datasheet.co.kr datasheet pdf - http://www..net/
p - channel 30 - v (d - s) mosfet ME4435 04 mar ,200 7 - ver 4 .0 typical characteristics (t j =25 noted) www.datasheet.co.kr datasheet pdf - http://www..net/
p - channel 30 - v (d - s) mosfet ME4435 05 mar ,200 7 - ver 4 .0 millimeters dim min max a 1.35 1.75 a1 0.10 0.25 b 0.35 0.49 c 0.18 0.25 d 4.80 5.00 e 3.80 4.00 e 1.27 bsc h 5.80 6.20 h 0.25 0.50 l 0.40 1.25 0 00 0 7 sop-8 package outline www.datasheet.co.kr datasheet pdf - http://www..net/
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